2n3819 Characteristic Curves
2N3819Datasheet (PDF)1.1. Size:65K philips1.2. Size:29K fairchildsemi2N3819N-Channel RF Amplifier This device is designed for RF amplifier and mixer applicationsoperating up to 450MHz, and for analog switching requiring lowcapacitance. Sourced from process 50.TO-9211. SourceEpitaxial Silicon TransistorAbsolute Maximum Ratings. TC=25°C unless otherwise notedSymbol Parameter Ratings UnitsVDG Drain-Gate Voltage 25 VVGS G1.3. Size:53K vishay2N3819Vishay SiliconixN-Channel JFETPRODUCT SUMMARYVGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA)v 8 25 2 2FEATURES BENEFITS APPLICATIONSD Excellent High-Frequency Gain: D Wideband High Gain D High-Frequency Amplifier/MixerGps 11 dB @ 400 MHzD Very High System Sensitivity D OscillatorD Very Low Noise: 3 dB @ 400 MHzD High Quality of Amplification D Sample-and-Hold1.4. Size:170K onsemi2N3819JFET VHF/UHF AmplifierNChannel DepletionMAXIMUM RATINGSSymbol Value UnitDrainSource Voltage VDS 25 Vdc3 DRAINDrainGate Voltage VDG 25 VdcGateSource Voltage VGS 25 Vdc2Drain Current ID 100 mAdcGATEForward Gate Current IG(f) 10 mAdcTotal Device Dissipation PD1 SOURCE@ TA = 25°C 350 mWDerate above 25°C 2.8 mW/°CStorage Channel Te.